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Experts in Float Zone Single Silicon Crystal Growth Method| The following experts are available as float zone single silicon crystal growth method consultants and float zone single silicon crystal growth method expert witnesses. Intota experts are peer-recommended authorities who have been carefully selected and rigorously screened. | |
| | Definition: Float Zone Single Silicon Crystal Growth Method -
A method of producing single crystals from poly-silicon. A rod of poly-silicon is clamped at both ends with the bottom end being in contact with a single-crystal seed of the desired orientation. Heat is provided by radiofrequency energy supplied by a coil which starts at the bottom, or seed end, and slowly moves upward, leaving behind a solid, single crystal that freezes out layer by layer. Synonyms: float zone single Si crystal growth method |
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Expert Quote | | |  | | Expert in Silicon - Processing, Defects, Devices, Silicon-on-Insulator; MEMS, Nanotechnology, Semiconductors
Work in collaboration with Kayex, Adema, and other companies that grow Czochralski silicon. Worked on radiation hardening of semiconductor devices since 1980. Have several patents on Rad Hardening of semiconductors Most of his 30-year experience is about ... See full profile | | New Jersey (NJ), USA  | | | |  | | Expert in Semiconductor Devices, Testing and Product Engineering, Marketing and Administration
Expert has spent most of his career in the semiconductor device and process technology areas. His experience is wide, with exposure to germanium and silicon discrete to large scale silicon integrated devices in the sub-micron regime. See full profile | | California (CA), USA | | | |  | | Expert in Materials and Controls
As the former Vice President of Materials and Controls at Texas Instruments, Expert has diversified experience in electronics corrosion prevention, metallurgy, and electronic ceramics and thermostatic bimetal discs. See full profile | | Massachusetts (MA), USA | | |  |
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