From 1979 to 1984, he has held technical positions at Stanford University, Purdue University, and the German Space Agency in Stuttgart, Germany. For the following 27 years he worked in the semiconductor industry, first at Siemens Laboratories (1984–1989, Munich) and then at Motorola Laboratories (1989–2004, Austin, Texas) and Freescale Semiconductor (2004–2008).

Since 2008 he has served as a Professor, where he continues his research in semiconductor device physics and technology. His present research interest are resistive RAM memory devices.

While at Siemens, he conducted research in the physics of metal-oxide semiconductor field effect transistors (MOSFETs). In 1987 he published the first explanation of a fundamental phenomenon known as the “reverse short channel effects,” which has since become a standard feature of all advanced MOSFETs. In 1989 he published an in-depth analysis that correctly predicted degradation effects in MOSFETs.

His research in semiconductor device physics at Motorola had a specific emphasis on non-volatile memories and associated physical effects, such as band-to-band tunneling. In 1990 he was the first to calculate band-to-band tunneling in MOSFETs, and correctly predicted new modes of tunneling including band-to-band tunneling in non-volatile memories.

In addition to conducting research in semiconductor physics, he successfully managed the development of several technologies. For example, while working within the Crolles consortium [Motorola (Freescale), Philips(NXP), and STMicroelectronics, Grenoble, France], he led the development of a 50 nm fully depleted silicon-on-insulator (SOI) MOSFET with TiN/HfO2 gate stack, and a 30 nm gate length SOI MOSFET. While at Motorola he managed several R&D groups. In 1989–1995 I established the first Technology Computer Aided Design (TCAD) Modeling and Simulation group at Motorola. In 1992–1995 he established the first Equipment Modeling and Simulation at Motorola. He successfully managed a Motorola-Freescale program with SOFT-TEC, a company established in 1993 by prominent Russian scientists in collaboration with the Russian Academy of Sciences, comprising 105 engineers and scientists. In 2000, he established the first Design Manual Group as an interface between the CMOS technology development and the circuit design community at Motorola/Freescale.

In 1997 he was elected a Fellow of the Institute of Electrical and Electronics Engineers (IEEE), “for contributions to the MOSFET devices and technology.”

His work in semiconductors is equally divided between device development and process development and process integration. He has developed new modules for poly gate, LOCOS and trench isolation, gate oxide, spacer and liner formation, implantation, diffusion and isotropic and anisotropic (plasma) etching.

Expert belongs to IEEE and has the rank of IEEE Fellow; he is a member of the Electrochemical Society and Electron Device Society.

Referee for IEEE Electron Letters, Applied Physics Letters, Journal of Electrochemical Society, Journal of Applied Physics, Solid State Electronics, Physical Review C, and Physics Letters.

Book Reviewer for IEEE Cicuits and Devices.

Advisor to the IEEE EDS Fellow Evaluation Committee (2000 – present).

Chairman of sessions at several international conferences.

Published interviews with trade publications such as International Semiconductor.

2007 Master Innovator Award Freescale (there were 15 Master Innovators at Freescale, a company of 24,000 employees).

1999 Platinum Silver Quill (Publication) Award Motorola.

1998 Fellow of Technical Staff Motorola/Freescale.

1998 Distinguished Innovator Award Motorola.

1997 IEEE Fellow Award, citation: for contributions to the modeling of MOSFET devices and technology (IEEE - Institute of Electrical and Electronics Engineers).

1970 Scheffel Award (for the best final highschool exam in the state of Baden-Wuertemberg).

Expert has given training seminars on non-volatile memory devices, NAND and NOR architecture.

Expert has selected vendors for several pieces of semiconductor equipment and purchased it from my university funds: Rapid Thermal Processing (RTP), Atomic Layer Depositition (ALD), plasma etching, and plasma deposition. He has received as a donation from Freescale probe station for his laboratory.

Expert has been working for Motorola in Russia for 2.5 years where he has established the Moscow Research Lab for Motorola. During his stint in Moscow he came to understand the semiconductor resources in Russia, both in academia and in the industry. He has been working for Fresscale in Grenoble France as a director of SOI reserach for the Crolles II consortium (Motorola/Freescale, STMicroelectronics, Philips/NEXT). He came to understand the management of the consortium and the French policy approach. He had regularly to report about progress of the research to the French ministry of Industry in Paris.