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Expert in Semiconductor Materials Characterization Thin Film Deposition
Available for your Consulting and Expert Witness Needs
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| Summary of Expertise: |
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Primary Expertise Areas:
(links show more experts in each area)
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Expertise Description: |
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epitaxial reactor expert |
He has extensive experience, over 20 yrs, in the field of epitaxial deposition of III-V semiconductor materials for opto-electronic devices (InGaAsP/InGaAlAs/InP and AlGaAs/InGaP/GaAs based materials). This includes the growth of high-speed bipolar transitors, phototransistors, lasers, pin and avalanche high-speed photodetectors. He has operated a variety of commercial equipment including MBE systems from Vacuum Generators, Varian, and Riber and MOCVD systems from Aixtron. He has experience with many types of sources including standard effusion cells, solid and gas source crackers. In addition to these commercial systems he also has designed and built a compact gas source MBE system for the growth of InP based III-V materials. Much of his work relating to epitaxial growth has been published in peer-reviewed journals such as the Journal of Crystal Growth and Applied Physics Letters. He was one of the first researchers to develop the use of carbontetrabromide for carbon p-type doping in InGaAs materials that has been essential for the development and reliability of high-speed bipolar transistors. |
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vacuum system expert
high vacuum system expert
ultra-high vacuum system expert
vacuum environment expert |
He has over 25 years of experience with vacuum systems from basic rough pumped deposition chambers to ultrahigh vacuum all metal sealed systems reaching base vacuum pressures of 1x10-11 torr. In the course of his research he has acquired extensive expertise with many types of pumping systems including Oil & Mercury Diffusion, Turbo, Ion, Cryo, Sublimation, Roots Blowers, Rotary vane, Scroll, Diaphragm, and Venturi pumps. This also includes extensive work with various vacuum measurement techniques such as Ion, Cold cathode, Manometers, Strain, Pirani, and RGA. In the course of his research he has designed, built, and operated vacuum systems for eptitaxial and thin film deposition of state of the art opto-electornic materials and high temperature, high vacuum in-situ x-ray analysis. These systems required the use of many different high temperature materials (e.g. aluminum oxide, pyrolitic boron nitride, tantulum, molybdenum, and tungsten) compatible with a high temperature and high vacuum environment. He has worked with many different vacuum deposition techniques, which include thermal (both resistive and e-beam), sputtering, PECVD, MBE, and MOCVD. He has worked with numerous systems requiring the pumping of toxic and flammable gasses such as phosphine, arsine, silane, hydrogen, oxygen, and pyrophroric metalorganics and has acquired extensive experience with all of the associated safety issues in the use of these hazardous gasses including storage, monitoring, personal protective equipment such as SCBA's, emergency response procedures, and waste removal requirements and procedures. |
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X-ray diffraction analysis expert |
He has many years of experience in the field of x-ray diffraction starting from his thesis work in dynamical x-ray diffraction in fulfillment of a Master Degree from the Polytechnic Institute of New York. He has experience with numerous diffraction techniques including powder, back reflection Laue, high resolution single crystal, double crystal, dynamical and energy dispersive techniques using both sealed tube and rotating anode x-ray sources. In the course of his research he has investigated many different materials including but not limited to various thin film metal contacts, silicides, oxides, superconductors, and III-V semiconductors. He has designed and built numerous custom x-ray systems for the study of both thin film and single crystal structures. The results of these studies have been published in peer-reviewed journals such as JAP and APL. He has developed various C based software applications utilizing Fourier analysis to simulate x-ray diffraction data and extract structural parameters. |
| Show Secondary and Basic Areas of Expertise |
Localities: Expert may consult nationally and internationally, and is also local to the following cities: New York, New York; Yonkers, New York; Newark, New Jersey; Jersey City, New Jersey; Paterson, New Jersey; Elizabeth, New Jersey; Bridgeport, Connecticut; New Haven, Connecticut; Stamford, Connecticut; and Philadelphia, Pennsylvania.
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| Year |
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Degree |
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Subject |
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Institution |
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1979
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MS
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Physics
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Polytechnic Institure of New York
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1977
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BS
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Physics
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Polytechnic Institute of New York
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| Years |
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Employer |
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Department |
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Title |
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Responsibilities |
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2001 to
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(Undisclosed)
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Growth and Characterization
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Member of Technical Sales
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He manages a production MOCVD reactor for the development & production of optical devices (lasers and detectors) for telecom applications. This includes all aspects of system operation and coordination between various projects. He is responsible for the materials development and mask design for various foundry and government contracts. He also handles all purchasing for the Growth & Characterization grouup.
He managed the design and construction of a new 10,000ft2 semiconductor clean room facility for III-V growth and processing, including all hazardous gas safety systems, chemical waste treatment systems, compliance with local and national fire and safety codes, and installation of all growth and characterization equiqment. Responsible for coordinating with general contractor from initial concept to commisioning/certification of clean room.
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1982 to 2001
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Lucent Technologies/AT&T Bell Labs
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Physical Sciences Research
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Member of Technical Staff
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He carried out research and development in advanced semiconductor opto-electronic devices and processing of semiconductor materials. He published many papers in peer reviewed journals and given presentations at numerious industry conferences.
He was responsible for managing the epitaxial growth program for the development of high speed Indium Phosphide based materials/devices using the Molecular Beam Epitaxy growth method. Managed and coordinated development lab for thin film deposition of various metals, metal oxides, oxides, and carbon films using e-beam, sputter,and thermal deposition techniques. He has designed and built a variety of UHV compatible high temperature cells used in various film deposition applications. He developed a number of Fortran and C based software applications utilizing Fourier analysis to simulate x-ray diffraction data and extract structural parameters.
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1978 to 1982
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AT&T Bell Labs
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Physical Sciences Reasearch
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Senior Technical Associate
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He was responsible for the operation of a research and development thin film deposition lab. This included the designing, construction, and operation various thin film deposition systems including e-beam, thermal, and sputter systems. He has worked with the deposition of many different materials systems including Au-Al, Cu-Al, PbO, and type A15 superconductors.
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Associations/Societies
IEEE
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| Publications: |
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Publications and Patents Summary
He has more than 50 publications and 6 patents
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Selected Publications and Publishers
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- Electrochemical Society, State-of-the-Art Program on Compound Semiconductors
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- Elsevier/Journal of Crystal Growth
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- American Vacuum Society/The Journal of Vacuum Science and Technology
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- American Institute of Physics/ Appl. Phys. Lett
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- American Institute of Physics/ Appl. Phys. Lett.
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| Government Experience: |
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Agency |
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Role |
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Description |
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2001 to
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DARPA
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Team member
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New materials and device development for DARPA contract.
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| Selected Consulting Examples: |
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He provides consulting services for the High Speed Electronics group at Bell Labs, Murray Hill, NJ. This includes consulting on new epitaxial growth techniques and materials for high speed InP based electronics. He also provides support for upgrading and maintaining their semiconductor growth system which includes the vacuum system, toxic gas handling, safety and control systems.
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As a member of the Intota consultant network,
Expert is a specialist who provides technical consulting to corporate, legal and government clients. Expert provides professional consulting as a Semiconductor Materials Characterization Thin Film Deposition Consultant. Expert may consult as an independent consultant or as a member of a consultancy, consulting company,
or consulting firm. Consultants service will be covered by a consulting contract.
Ask an expert initial screening questions and ask the experts services particulars, by simply submitting
an expert request.
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Intota experts can serve as expert witnesses or litigation consultants offering expert testimony, expert advice, litigation support,
forensic services, and related expert witness services. Expert can serve as an expert witness or litigation consultant in intellectual property (patent, trademark, trade secret, copyright),
product liability, and insurance matters. Expert may provide forensic expert witness testimony, litigation consulting services, forensic investigation,
and forensic testing if appropriate in litigation areas as a Semiconductor Materials Characterization Thin Film Deposition Expert Witness.
Intota provides attorneys and legal professionals the opportunity to ask an expert initial screening questions and
ask the experts services particulars by submitting an expert request.
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Expert serves as a resource to
Intota Market Research Services
for customized marketing research in industries or areas related to
Semiconductor Materials Characterization Thin Film Deposition.
Experts are an invaluable source of overall industry insight as well as insight into specific companies and firms for
custom business to business (b2b) and industrial market research. Intota uses analyst and
consultant resources from Guideline whose Research Directors manage the research and analysis of the qualitative
and quantitative data as well as report writing for the custom studies. The methods and tools
used by Intota market research combine the insights of technical experts and industry insiders with secondary
research to provide the custom b2b and industrial market research you need.
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| Additional Skills and Services: |
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Supplier and Vendor Location and Selection He was responsible for selecting a construction firm to build a 10,000 Sq Ft semiconductor clean room facility which is used for the growth and processing of state of the art semiconductor laser and detectors devices. Approximate budget was 5M. After putting together a general facility layout and a detailed equipment matrix with appropriate services he solicited bids from qualified vendors which were then reviewed. After presentations were given the firm best able to meet our needs was picked.
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